A new high-voltage semiconductor platform designed to enhance efficiency in electric vehicle fast charging infrastructure has been introduced by a leading technology firm. The platform leverages silicon carbide (SiC) MOSFETs capable of handling 1,200 volts, addressing power demands in next-generation charging systems. Industry experts suggest such advancements could accelerate the adoption of faster, more reliable EV charging networks. The development highlights ongoing innovation in semiconductor technology to support the growing electric vehicle market.
L&T Semiconductor Technologies unveils a 1,200 V SiC MOSFET platform for EV fast chargers chargedevs.com
