Semiconductor manufacturer Nexperia and materials supplier Aurobay are collaborating to develop advanced gallium nitride (GaN) and silicon carbide (SiC) power devices tailored for electrified vehicle powertrains. The partnership aims to leverage Aurobay’s expertise in wide-bandgap materials to enhance the performance and efficiency of Nexperia’s power electronics solutions. These technologies are critical for improving energy efficiency and reducing weight in electric and hybrid vehicle systems. The focus on GaN and SiC highlights the growing demand for high-power, high-temperature components in next-generation automotive applications.
Nexperia and Aurobay to explore GaN and SiC power devices for electrified powertrains Charged EVs
