ROHM has introduced advancements in its 650-volt insulated gate bipolar transistor (IGBT) technology, significantly reducing power losses to enhance efficiency in electric vehicle auxiliary systems. The improvements aim to address the growing demand for high-performance components in EVs, where energy conservation is critical. By optimizing switching behavior and thermal management, the company claims these IGBTs could improve overall system reliability and reduce cooling requirements. Developers and manufacturers of EV auxiliary systems may find this innovation particularly relevant as they seek to balance performance with energy efficiency.
ROHM pushes 650 V IGBT losses lower for EV auxiliary systems ... eeNews Europe
